Bridgelux, an innovator and supplier of LED lighting technologies and solutions, and Toshiba, a semiconductor producer, recently declared that both have been recognized for industry's premium 8" GaN on Silicon LED chip, which is capable of emitting 614 mW, less than 3.1V at 350 mA with 1.1 mm square chip. This achievement follows the 2012 joint collaborative agreement.
Rapid development of LED chips will be carried out by Bridgelux and Toshiba. However, the global demand for the companies’ LCD panels and lightening systems has been growing.
With an equity investment in Bridgelux, Toshiba can progress with an innovative technology in the Solid State Lighting (SSL) space along with Bridgelux. Following this investment, both companies will have improved SSL industry initiatives, through which Bridgelux can build its GaN-on-Silicon LED chip technology development efforts using the advanced silicon process and manufacturing technology development efforts from Toshiba.
According to the CEO of Bridgelux, Bill Watkins, Toshiba and Bridgelux have been involved in technology development previously. This equity investment serves as an opportunity for both companies to have a stronger strategic relationship with shared objective of reducing the cost of Solid State solutions, supporting the general lighting market.
Corporate Vice President of Toshiba, EVP of Semiconductor and Storage Products Company, Makoto Hideshima says that the company’s world-class achievement of 8" GaN-on-Silicon LED performance owes to the joint development initiatives with Bridgelux. Toshiba will further progress with advanced development with an intent to commercialize the innovative technology.
Source: http://www.bridgelux.com/