Dec 24 2010
Supplier of laser-processing systems, Ultratech has rolled out a new dual-beam laser spike anneal system for use with advanced logic solutions. The LSA100L is suitable for middle-of-line (MOL) and front-end-of-line (FEOL) applications.
In addition, the company, with the LSA100L system, adds low-temperature processes including nickel silicide formation to its LSA operations.
The DB-LSA system incorporates a customizable Unity Platform and offers a number of advantages such as closed-loop wafer temperature control, layout-independent process results, and enhanced within-die uniformity. The LSA100A features a narrow CO2 laser beam that is utilized for heating the wafer surface from about 400°C substrate temperature to 1100-1350°C peak annealing temperature.
Another wide laser beam is included in the dual-beam laser spike anneal system. The second laser preheats the wafer locally, enabling minimal chuck temperatures for MOL processes including nickel silicide formation. The LSA100L also includes a low-temperature control and measurement system that expands the operating temperature range to 400°C.
Source: http://www.ultratech.com/