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Deep ICP-RIE Etched Trenches with Sidewall Slope Control of GaAs-type High Power PLDs

As part of LASER COMPONENTS‘ presentation marathon at the SPIE LASER conference during Photonics West, Thierno-Mamoudou Diallo, Opto-Electronics and III-V Semiconductor Specialist at LASER COMPONENTS Canada, will introduce new micro-fabrication methods on January 28th at 11:30am PST.

Deep ICP-RIE Etched Trenches with Sidewall Slope Control of GaAs-type High Power PLDs

Image Credit: LASER COMPONENTS

In his second presentation, Thierno will discuss new methods in the micro-fabrication of GaAs-based Pulsed Laser Diodes (PLDs) optimised for 905 nm. Our team at LASER COMPONENTS Canada used inductively coupled plasma-reactive ion etching (ICP-RIE) to achieve precise waveguide trench geometries with sidewall angles of 60° to 70°.

Compared to conventional wet etching, this optimised process allows for a reduced device footprint and an increased yield per wafer. It is an important step towards scalability and improved efficiency in the micro-fabrication process for advanced PLDs.  While you are at Photonics West, remember to stop by the Laser Components Booth 1449. We look forward to seeing you soon.

Source: https://www.lasercomponents.com/uk/

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