Jan 15 2008
Intense Ltd., developer of next generation lasers, has signed a distribution agreement with A&P Instruments, a leading OEM distributor of lasers and instrumentation in China. The agreement enables A&P to distribute Intense's entire line of high power, QWI enabled laser diodes to manufacturers in China that require sophisticated instrumentation and optical components. Products include Intense's high power visible and IR laser diodes, bars and stacked arrays, fiber lasers, and individually addressable arrays.
"China's rapid manufacturing expansion and quest for innovation present significant opportunities for Intense," stated Chris Baker, VP Sales and Marketing at Intense Ltd. "A&P is a highly experienced and successful laser distributor in China. They share our philosophy and passion for creating advanced laser solutions for clients and our combined efforts will accelerate the delivery of new products throughout China. We look forward to a mutually beneficial relationship."
"We are pleased to partner with Intense as this allows us to provide clients with the most advanced portfolio of laser products available on the market," stated Sammy Woo, China Sales and Marketing Manager, A&P Instruments. "We have been doing business in China successfully for 24 years and have an unrivaled understanding of what our customers need. Our clients are demanding higher power, reliability, and brightness and Intense's product line enables us to meet our clients' most stringent requirements."
Quantum Well Intermixing: Brightness, Reliability, Efficiency
Utilizing its patented Quantum Well Intermixing (QWI) technology, Intense creates innovative laser products that enable unrivalled levels of power, brightness, and reliability. State-of-the-art, high volume manufacturing processes deliver exceptional performance in high power visible and IR laser diodes, high power bars and stacked arrays, high power fiber lasers, and individually addressable arrays. Intense's patented Quantum Well Intermixing process increases the quantum well bandgap of a semiconductor laser in a controlled and highly precise manner so that active and passive sections can be created in the same laser cavity. Passive non-absorbing mirrors (NAMs) are created at the facet regions of the cavities to avoid catastrophic optical mirror damage (COMD), a problem frequently encountered in other laser devices.