The President and CEO of Imec, Luc Van den Hove has announced that the installation process of the NXE:3100, ASML’s Extreme Ultraviolet Lithography scanner (EUVL), has begun in its facility at Leuven.
The NXE:3100 features optimized optics and a high power source. The announcement was made at the SPIE advanced lithography conference.
The scanner utilizes a Discharge Produced Plasma EUV light source developed by Extreme Technologies. The throughput performance of the NXE:3100 increased by a factor of 20 compared to the EUV Alpha Demo Tool at Imec.
The EUVL program’s scanner-specific research will study the dissimilarities between optical lithography and Extreme Ultraviolet lithography by integrating 1x and 2x nm memory processes and the 14 nm logic. The research will also study the resists that work to improve the line-edge roughness and reduce reticle defects and pattern collapse.
Luc Van den hove also stated that after the installation of the NXE:3100, they will be better equipped to continue the research required to begin the production process of the EUVL.