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AIXTRON’s G5 HT MOCVD Reactor Selected for GaN-Based LEDs

AIXTRON announced that Formosa Epitaxy (FOREPI), a manufacturer of InGaN LED wafers, has ordered for an AIX G5 HT MOCVD reactor for use in ultra HB GaN-based LEDs. The MOCVD reactor will join FOREPI’s high throughput Planetary Reactor solutions at its Taiwan facility.

The President of FOREPI, Dr. Fen-Ren Chien stated that the G5 HT MOCVD reactor enables the company to transfer the process recipes to new reactor smoothly. FOREPI chose the AIXTRON system because of the high performance of the existing systems, like the CRIUS and the G4. Hence, the company has keen interest in buying the new products of Aixtron, including the CRIUS II and the G5.

After the recipe transfer, FOREPI will utilize all the benefits of the G5 MOCVD system. The reactor has already demonstrated good GaN deposition at high pressure and growth rates above 600 mbar, enabling improved GaN/InGaN uniformities, Chien added.

The G5 MOCVD reactor offers sophisticated production solutions, helping manufacturers to meet the increasing market demands on productivity and performance. It has special features, such as EqiSat, a graphite ceiling, and a high growth rate injector, to allow identical surface temperatures on all kinds of wafers/satellites.



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