The SARF series of silicon APDs is housed in a modified TO-46 housing that contains a bandpass filter and 500 micron detector chip. The centre wavelength of the bandpass filter is 905 nm. The device has been specifically designed for laser range finding applications. From our research and production facility in Tempe Arizona we supply customers all over the world with these industrial grade detectors.
Unlike a conventional PIN diode, APDs use an internal electric field to accelerate the charge carriers set free by the incoming radiation generating an avalanche of electron-hole pairs through impact ionisation producing a much larger photocurrent than can be created using a PIN diode.
An important advantage of this new reach through APD is its unmatched noise and sensitivity performance, the responsivity of the device at the peak wavelength is 10A/W.
The elimination of an external filter produces a cost saving and a compact design.