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Hamamatsu Introduces CCD Image Sensor with Enhanced NIR Sensitivity

Hamamatsu has unveiled a back-thinned fast Fourier transform CCD image sensor called the S11500-1007 for photometric and Raman spectroscopy uses.

The image sensor provides broad spectral range between 200 and 1100 nm and has quantum efficiency of 40% at 1000 nm wavelength.

S11500-1007

At the rear side of the CCD, a microelectromechanical systems structure is created by using the company’s patented laser processing technology to improve sensitivity in the near-infrared (NIR) region, which is important for determining long-wavelength Raman emissions.

The sensor features 1024×122 pixels with a pixel dimension of 24×24 µm. The CCD can be used as a linear image sensor for binning operation, which assures a uniform higher signal-to-noise ratio and quicker signal processing speeds than techniques using external circuits to include signals digitally.

The CCD image sensor is available in a 24-pin ceramic dual in-line housing with a quartz glass window. It is compatible with Hamamatsu’s C7040 multichannel detector head. Some of the characteristics of the CCD image sensor are horizontal and vertical input source voltage from 0.5 to 18 V, reset drain voltage range between -0.5 V and 18 V, output transistor drain voltage range between -0.5 V and 25 V, operating temperature range between -50 °C and 50 °C and two-phase horizontal and vertical clock phase.

Source: http://www.hamamatsu.com

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