HexaTech Inc. announced today the demonstration of its first generation UVSureTM UV-C LED, based on HexaTech's proprietary and world-leading aluminum nitride (AlN) substrate material.
The 263 nm wavelength device achieves 6 mW in a 0.15 mm2 active area die. When scaled to our second generation larger footprint, the die is expected to produce approximately 24 mW, which is twice the radiant flux of competitive products.
Further, when driven in pulse mode to 300 mA, the same 0.15 mm2 active area die is able to reach 19 mW, or approximately 76 mW in the large die format.
"This demonstration is a milestone in our business, and is the direct result of intense device R&D coupled with the use of our exclusive high quality AlN substrate material," stated HexaTech CEO John Goehrke. He added, "This capability allows us to engage the UV-C LED market at the right moment, linking together incredibly strong interest with cutting-edge performance. It also clearly demonstrates our continued assertion that the best substrate material yields the best device performance, and this first generation result is just the beginning."
"We are truly excited to be in a position to support the rapidly expanding UV-C LED customer interest seen over the last several years," remarked Gregory Mills, HexaTech's Director of Business Development. "With point-of-use (POU) sterilization applications alone representing a $400M+ opportunity in the coming years, we anticipate significant corporate expansion and strategic customer engagement," he noted.
Dr. Joseph Smart, Director of LED Development commented, "HexaTech's world-leading, high quality bulk AlN substrates are the essential foundation for attaining these results, enabling near perfect epitaxial growth quality throughout the active region of the device, essential to produce both high internal quantum efficiency (IQE) and long component lifetimes. This is something that competing sapphire substrate technology simply cannot sustain at these wavelengths."