Jul 31 2010
Carl Zeiss’ SMS (Semiconductor Metrology Systems) division and SEMATECH announced that the former’s photomask overlay and registration metrology system has cleared a major milestone.
The PROVE metrology system has the potential to measure the latest photomasks for the 32 nm or lesser nodes. In the test, specifications for 1.0 nm accuracy and 0.5 nm repeatability in overlay measurement, registration, and image placement were verified.
The PROVE’s performance targets were decided based on the demands for double patterning/exposure mask overlay and pattern placement, and advanced memory. This will help to stretch the 193nm lithography as per the International Technology Roadmap for Semiconductors (ITRS). The new technology marks a major advancement over the earlier capability because of the advanced metrology platform, flexible in-die registration analysis algorithm, a versatile illuminator that increases image contrast, and a 193nm wavelength imaging optics.
The PROVE will play a crucial role in developing the next generation mask-making technology. The metrology system can be completely extended for EUV photomasks measurement.
SEMATECH’s Director of Lithography, Bryan Rice, stated that this is a key milestone toward facilitating the 32nm node mask requirements of the ITRS. He further added that the specification achievement would help in boosting the photomasks development with tighter overlay necessities. The Managing Director of Carl Zeiss SMS, Dr. Oliver Kienzle commented that the PROVE system is based on a new platform that allows sub-nanometer pattern placement metrology in a flexible way.
Source: http://www.smt.zeiss.com/