Jun 11 2010
Technologies and Devices International (TDI) and Ostendo Technologies have introduced the Semi-Polar (11-22) GaN layer on sapphire substrate wafer materials for LED manufacturers. The GaN wafers were produced by utilizing TDI’s patented Hydride Vapor Phase Epitaxy (HVPE) technology and Ostendo’s patented design technology.
Laser diode and high-brightness light emitting diode (HBLED) manufacturers can increase the optical efficiency of their products by using the GaN wafers. This optical efficiency is comparatively better than the structures produced from c-plane GaN materials.
Ostendo develops display products and technologies that are based on Solid State Light technology. The company offers its display products for both residential and commercial applications.
TDI specializes in developing Hydride Vapor Phase Epitaxy (HVPE) techniques and processes, which can be used to produce new compound semiconductors such as InGaN, InN, AlGaN, AIN and GaN semiconductors.
Oxford Instruments utilizes TDI HVPE technology to generate templates for a number of applications such as electron mobility transistors (HEMT), laser diodes and high-brightness light-emitting diodes (HBLEDs). TDI is a part of the Oxford Instruments Group.
Source: http://www.ostendo.com