Bridgelux Breaks Record for Highest GaN-On-Silicon Lm/W Values
Bridgelux has demonstrated highest Lm/W levels for Gallium Nitride on Silicon (GaN-on-Si) and has broken its own record with this achievement.
The company has extended its lead in manufacturability and performance of GaN LEDs. It demonstrated high performance levels of LEDs which were comparable to that of sapphire-based LEDs. Warm white LEDs made from GaN on Si chips provided 125 Lm/W at 80 CRI and 2940K color temperature. Cool white LEDs provided 160 Lm/W at 4350K CCT.
The cost of production of conventional LEDs has curtailed its adoption in commercial buildings and residences. These LEDs are made from silicon carbide and sapphire substrates which are comparatively more costly than silicon. Growing GaN on low-cost and larger-sized silicon wafers can improve the cost factor by 75%.
Bridgelux has showcased the growth of layers of GaN on 8" silicon wafers using its buffer layer technology. GaN has a larger thermal expansion coefficient than silicon. This can lead to cracks in the epitaxial films or cause bowing in the wafers. Bridgelux’s technology enabled production of wafers that were crack-free and did not break at room temperature.
Encapsulated 1.5 mm blue LEDs emitted 591 mW at 350 mA exhibiting 59% wall plug efficiency. The LEDs can be used at high current densities due to their low forward voltages of 2.85 V at 350 mA. The LEDs emitted 1.52 W blue power at 3.21 V forward voltage and a 1 A drive current. Bridgelux demonstrated sigma 6.8 nm wavelength uniformity for 8-inch LED wafers.
Bridgelux’s buffer layer technology process can decrease the manufacturing cost of LEDs and allow them to compete against white lighting technology.
Please use one of the following formats to cite this article in your essay, paper or report:
APA
Choi, Andy. (2019, February 28). Bridgelux Breaks Record for Highest GaN-On-Silicon Lm/W Values. AZoOptics. Retrieved on January 29, 2026 from https://www.azooptics.com/News.aspx?newsID=14223.
MLA
Choi, Andy. "Bridgelux Breaks Record for Highest GaN-On-Silicon Lm/W Values". AZoOptics. 29 January 2026. <https://www.azooptics.com/News.aspx?newsID=14223>.
Chicago
Choi, Andy. "Bridgelux Breaks Record for Highest GaN-On-Silicon Lm/W Values". AZoOptics. https://www.azooptics.com/News.aspx?newsID=14223. (accessed January 29, 2026).
Harvard
Choi, Andy. 2019. Bridgelux Breaks Record for Highest GaN-On-Silicon Lm/W Values. AZoOptics, viewed 29 January 2026, https://www.azooptics.com/News.aspx?newsID=14223.
We're committed to providing free access to quality science. By registering and providing insight into
your preferences you're joining a community of over 1m science interested individuals and help us to
provide you with insightful content whilst keeping our service free.
or
Terms
While we only use edited and approved content for Azthena
answers, it may on occasions provide incorrect responses.
Please confirm any data provided with the related suppliers or
authors. We do not provide medical advice, if you search for
medical information you must always consult a medical
professional before acting on any information provided.
Your questions, but not your email details will be shared with
OpenAI and retained for 30 days in accordance with their
privacy principles.
Please do not ask questions that use sensitive or confidential
information.
Read the full Terms & Conditions.