Jan 13 2011
Supplier of laser processing systems, Ultratech has introduced a new laser spike annealing (LSA) system that allows important annealing uses for the 28-nm node production.
The LSA101 LSA system includes advanced coherent optics that produces a focused, long beam of laser at the wafer plane to offer the ability to maximize throughput by about 200% than the LSA100A system.
Ultratech’s LSA101 can reduce the annealing time by a factor of two in contrast to the LSA100A system. The laser spike annealing system reduces ownership cost by 65%. At present, a consumer in Asia is testing the LSA101 for 28-nm production. The LSA101 features a dwell time as low as 200 µs and a broad operating range for dwell time or annealing time.
Ultratech’s VP of Laser Product Marketing, Jeff Hebb, Ph.D. stated that the LSA101 incorporates the long-wavelength technology as the LSA100A. He added that the LSA101 offers enhanced closed-loop wafer temperature control, layout-independent process results, and within-die uniformity.
Source: http://www.ultratech.com/