Atomic Layer Deposition (ALD) Systems

Atomic layer deposition (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. The majority of ALD reactions use two chemicals referred to as precursors. ALD provides a unique method for depositing ultrathin films on surfaces.
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Equipment
Beneq TFS 200 Atomic Layer Deposition System is designed for research and development purposes. The system can be used for depositing various thin films on various substrates.
Beneq P400A Atomic Layer Deposition System is a general platform for the ALD-deposition for 3D-substrates and for wafers. Beneq P400A reactor allows immediate scale up after the initial R+D.
Beneq Thin Film System TFS 500 ALD reactor is designed for thin film processing, protective coating, functional surface buildup and doping purposes. Substrate alternatives include wafers and other planar substrates, powders and porous substrates and complex 3D substrates. Beneq TFS 500 can be equipped with a manual load lock for rapid wafer processing.
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