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Fairchild Integrates MOSFET and Diode into 100 V BoostPak Device for LED Applications

Fairchild Semiconductor, a leading global supplier of high performance power and mobile semiconductor solutions, optimizes the MOSFET and diode selection process by introducing a family of 100 V BoostPak devices that combines a MOSFET and diode in one package to replace discrete solutions currently used in LED TV / monitor backlight, LED lighting and DC-DC converter applications.

100V BoostPak Solution

By integrating the MOSFET and diode into a single package, the FDD1600N10ALZD and FDD850N10LD devices save board space, simplify assembly, lower bill of material (BOM) costs and improve reliability of the application.

The devices feature an N-channel MOSFET produced using Fairchild’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. The NP diode is a hyperfast rectifier with low forward voltage drop and excellent switching performance. It has much lower leakage current than a Shottky diode, which improves system reliability in high temperature applications.

Key Features:

FDD1600N10ALZD:

  • RDS(ON) = 124 mΩ (Typ.)@ VGS = 10 V, ID = 3.4 A
  • RDS(ON) = 175 mΩ (Typ.)@ VGS = 5 V, ID = 2.1 A
  • Low Gate Charge = 2.78 nC (Typ.)
  • Low Crss = 2.04 pF (Typ.)

FDD850N10LD:

  • RDS(ON) = 61 mΩ (Typ.)@ VGS = 10 V, ID = 12 A
  • RDS(ON) = 64 mΩ (Typ.)@ VGS = 5.0 V, ID = 12 A
  • Low Gate Charge = 22.2 nC (Typ.)
  • Low Crss = 42 pF (Typ.)

Both:

  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS compliant

Packaging and Pricing Information

Price: in 1,000 quantity pieces
FDD1600N10ALZD: US$0.49
FDD850N10LD: US$0.57

Availability: Samples available upon request

Delivery: 8-12 weeks ARO

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