Fraunhofer Institutes Design Key Elements for EUV Lithography

Researchers at three Fraunhofer Institutes have devised key components for EUV lithography.

Jointly developed key components for EUV lithography: Dr. Torsten Feigl, Dr. Stefan Braun and Dr. Klaus Bergmann (from left to right) with a collector mirror. © Dirk Mahler / Fraunhofer

Dr. Klaus Bergmann’s team from the Fraunhofer Institute for Laser Technology has developed light sources, while Dr. Torsten Feigl’s team from the Fraunhofer Institute for Applied Optics and Precision Engineering has developed collector optics and Dr. Stefan Braun’s team from the Fraunhofer Institute for Material and Beam Technology has designed illumination and projection optics.

A 2012 Joseph-von-Fraunhofer prize will be awarded to the teams involved in this strategic collaboration for their remarkable achievements. Dr. Bergmann’s team designed the EUV source’s first prototypes in 2006. A beta version is already being utilized in industrial applications to expose chips. Bergmann informed that the fast, pulsed release of electrically stored energy is the basis of the concept. In the method, a laser was used to vaporize a trace quantity of tin, which was then agitated several times per second to an emission at 13.5 nm using a high current.

A collector mirror’s quality is the key to allow the radiation to hit the exposure mask in the right spot accurately. The coating ensures minimal losses and superior quality, focused EUV radiation. Dr. Feigl stated that the challenge faced by the team was to design a multilayer coating system with superior radiation stability, thermal stability and EUV reflectance and to apply it over a curved collector surface. The resultant system is a more than 660-mm-dia multi-layer coated EUV mirror, which is marked as the largest of its kind in the world.

Projection mirrors are used for exposing the radiation that passed the mask onto the chips. Dr. Braun’s team has developed the optimum reflection layer for the projection mirrors. Magnetron sputtering offers optimum layer accuracy without the need of in-situ thickness control or additional polishing processes.

The new EUV lithography system is anticipated to commence commercial production in 2015.

Will Soutter

Written by

Will Soutter

Will has a B.Sc. in Chemistry from the University of Durham, and a M.Sc. in Green Chemistry from the University of York. Naturally, Will is our resident Chemistry expert but, a love of science and the internet makes Will the all-rounder of the team. In his spare time Will likes to play the drums, cook and brew cider.


Please use one of the following formats to cite this article in your essay, paper or report:

  • APA

    Soutter, Will. (2019, February 28). Fraunhofer Institutes Design Key Elements for EUV Lithography. AZoOptics. Retrieved on June 18, 2024 from

  • MLA

    Soutter, Will. "Fraunhofer Institutes Design Key Elements for EUV Lithography". AZoOptics. 18 June 2024. <>.

  • Chicago

    Soutter, Will. "Fraunhofer Institutes Design Key Elements for EUV Lithography". AZoOptics. (accessed June 18, 2024).

  • Harvard

    Soutter, Will. 2019. Fraunhofer Institutes Design Key Elements for EUV Lithography. AZoOptics, viewed 18 June 2024,

Tell Us What You Think

Do you have a review, update or anything you would like to add to this news story?

Leave your feedback
Your comment type

While we only use edited and approved content for Azthena answers, it may on occasions provide incorrect responses. Please confirm any data provided with the related suppliers or authors. We do not provide medical advice, if you search for medical information you must always consult a medical professional before acting on any information provided.

Your questions, but not your email details will be shared with OpenAI and retained for 30 days in accordance with their privacy principles.

Please do not ask questions that use sensitive or confidential information.

Read the full Terms & Conditions.