Posted in | NanoOptics

OSI Optoelectronics’ New Annular Quadrant Backscatter Detectors

OSI Optoelectronics (OSIO), an OSI Systems Company and global supplier of high performance standard and OEM photodiodes, high-power light sources, and turnkey solutions, introduces Annular Quadrant Silicon Photodiodes.

The new devices operate between 350 nm to 1100 nm and are used for backscatter reflectivity measurements.

The new silicon (Si) quadrant detector features an annular package design and includes a 200 µm laser-cut hole on the chip and the header that enables a fiber to be coupled from the back of the detector.

This ensures that the detector sensing area is always normal to the direction of the light, reducing the need for angular compensation during backscatter measurements. Available in TO-5 and TO-8 metal packages, the active area on each element is 1.6 mm2 and 19.6 mm2 respectively.

The element gap between the segments is ~0.10 mm. The spectral range is from 190 nm (min.) to 1100 nm (max.) with a typical peak wavelength of 980 nm. With responsivity at 790 nm, the typical A/W is 0.52.

OSI Optoelectonics’ new backscatter detector for reflectivity measurements operates between -20 °C and +60 °C.  Storage temperatures range from -20 °C to +80 °C.

For more information about OSI’s new Annular Ring Silicon Detectors, please go to:

For more information about the company’s new photodetectors for industrial and scientific applications, please visit:

About OSI Optoelectronics, Inc.

OSI Optoelectronics, Inc. Hawthorne, California-( ), a division of OSI Systems, is the global leader in design and manufacture of high performance standard, custom, and OEM silicon and InGaAs photodiodes. For over 40 years, we have developed and manufactured OEM and custom solutions for leading technologies and industries. We provide advanced optoelectronic components and sub-assemblies for aerospace and defense, security, inspection systems, medical, communications, and industrial automation applications.

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