The indium gallium arsenide phosphide is a quarternary compound semiconductor material. The compound is basically an alloy of gallium arsenide and indium phosphide. Lasers having indium gallium arsenide phosphide as the active medium emit wavelengths in the near-infrared region.
The operating wavelength of this laser is between 1.0 and 2.1 µm. By using this material for lasers the disadvantages of using aluminum based compounds was eliminated. The presence of indium adds stability to the material. This laser is of the tunable type, with the tunable wavelength range of 900 nm to 1.6 µm.
The physical properties and applications of this laser are discussed in the sections below.
||1.0- 2.1 µm
Physical and Chemical Properties
|Physical and Chemical Properties
The primary application InGaAsP laser is in optical communication.
Some of the other applications of the InGaAsP laser are listed below:
- Optical tuning
- Optical fiber communication
- Solid state laser pumping