LEDs are fabricated from III-V heterostructures grown onto InAs substrates. Optical immersion of lens with flip-chip devices enables three to five fold increase of output power.
- Low power consumptions (µW to mW range)
- Angle of emittance <40°
- Switching time: 10 ns (typical), 20 ns (max)
- Narrow bandwidth: FWHM = 0.1 to 0.2 ?max
- Wide operating temperature range