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OSRAM Opto Semiconductors Launches Two LED Prototypes for Headlights

Published on September 27, 2011 at 4:17 AM

By Andy Choi

OSRAM Opto Semiconductors, a unit of Siemens, will display its two LED prototypes for headlights in the form of the OSRAM OSTAR Headlamp Pro and the OSLON Black Flat at ISAL to be conducted from 26 to 28 September 2011 in Darmstadt.

OSLON Black Flat (left) and OSRAM OSTAR Headlamp Pro (right) combine new technologies with new functionality and are perfectly matched to the requirements of headlight systems. Credit: OSRAM

The OSRAM OSTAR Headlamp Pro can fulfill a broad range of necessities by means of adaptability and output to the ambient environment. The 20 x 20 mm high-flux LED is offered with 2-5 chips and a ceramic converter. It provides a better uniform light pattern, brightness and thermal stability compared to its earlier versions.

The OSLON Black Flat is the latest member of the OSLON Black Series and is integrated with a QFN package and a ceramic converter. It has 5 K/W of thermal resistance, which makes it 20% better than other products of the Black Series. The black package offers superior thermal stability, as the special material’s thermal coefficient of expansion equals that of the metal core board. The novel LED eliminates the use of a lens, which in turn allows the injection of its light near the light guide for instance. The solder pad is the same as the ones utilized in the whole series, allowing the significant augmentation of light output from a identical board design. With an operating current of 700 mA and a power draw of 2.3 W, the novel product attains a luminous flux of 190 lm.

Headlight manufacturers get more output for minimal money. Adaptive frontlighting system function can be obtained with chips that can be controlled in series or individually. This results in setups that enable matrix chip solutions. Typical luminous flux value is nearly 250 lm per chip at an operating current of 1 A. Thus, 5-chip version offers a luminous flux of 1250 lm and its thermal resistance is 2.1 K, which is 0.5 K less than that of the earlier model.

Source: http://www.siemens.com

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