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Results 21 - 26 of 26 for Aluminum gallium nitride

Substrates for GaN-Based Devices: Performance Comparisons and Market Assessment 2009

News - 26 May 2009

Over the past 15 years, the availability of high quality sapphire and silicon carbide substrates has enabled the rapid growth of the gallium nitride device (mainly high-brightness LED) market to $4.6...
Semi-Polar GaN Layer for Optoelectronic Devices

News - 10 Mar 2009

In the past decade, Group III-nitride materials have been widely used for visible and ultraviolet light emitting diodes and blue, violet laser diodes. Most of these optoelectronic devices are...
Researchers Overcome Major Obstacle in Reducing Cost of Solid State Lighting

News - 17 Jul 2008

Researchers at Purdue University have overcome a major obstacle in reducing the cost of "solid state lighting," a technology that could cut electricity consumption by 10 percent if widely...
SDK Begins Commercial Shipment of AlGaInP Ultrabright Red LED Chip

News - 31 May 2008

Showa Denko K.K. (SDK) has started commercial shipment of aluminum-gallium-indium-phosphide (AlGaInP) ultrabright red LED chips with luminous efficiency of 80 lumen per watt. The luminous efficiency...
DOE Invests $20.6 Million in Solid-State Lighting

News - 16 Feb 2008

The U.S. Department of Energy (DOE) today announced that DOE will provide up to $20.6 million for a total of 13 projects aimed at advancing solid-state lighting (SSL) research and product development....
Tokuyama Corporation successfully starts up AIXTRON MOCVD System for development and production of UV LEDs

News - 29 Oct 2007

AIXTRON AG is pleased to announce the successful start-up of an AIXTRON 200/4 RF-S epitaxy reactor at Tokuyama, Japan. The system is used for the development and production of AlGaN based ultra-violet...

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